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Philips Semiconductors
Product specification
Dual diode fast, high-voltage
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Isolated mounting tab
BYM359X
SYMBOL
damper modulator
QUICK REFERENCE DATA
DAMPER VR=1500 V VF 1.3 V IF(RMS) =15.7 A MODULATOR VR=800 V VF 1.45 V IF(RMS) = 11 A IFSM 60 A trr 145 ns
1
3
2
IFSM 60 A trr 300 ns
GENERAL DESCRIPTION
Combined damper and modulator diodes in an isolated plastic envelope for horizontal deflection in colour TV and PC monitors. The BYM359X contains diodes with performance characteristics designed specifically for applications from 16kHz to 56kHz The BYM359X series is supplied in the conventional leaded SOT186A package.
PINNING
PIN 1 2 3 DESCRIPTION damper cathode common anode/cathode modulator anode.
SOT186A
case
123
LIMITING VALUES
Tj = 25 C unless otherwise stated DAMPER SYMBOL VRSM VRRM VRWM IF(AV) IF(RMS) IFRM IFSM PARAMETER Peak non-repetitive reverse voltage. Peak repetitive reverse voltage Crest working reverse voltage Average forward current RMS forward current Peak repetitive forward current Peak non-repetitive forward current sinusoidal;a=1.57 t=25 s = 0.5 Ths 83 C t = 10ms t = 8.3 ms sinusoidal; with reapplied VRWM(MAX) CONDITIONS MIN MAX 1500 1500 1300 10 15.7 20 60 66 MODULATOR MIN MAX 800 600 600 8 11.0 16.0 60 66 UNIT V V V A A A A A
Tstg TJ
Storage temperature Operating junction temperature
-40 -
150 150
-40 -
150 150
C C
December 1999
1
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. -
BYM359X
MAX. 2500
UNIT V
Cisol
Capacitance from T2 to external f = 1 MHz heatsink
-
10
-
pF
THERMAL RESISTANCES
DAMPER SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air. TYP. 55 MAX. 4.8 MODULATOR TYP. MAX. 4.8 55 UNIT K/W K/W
STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated DAMPER SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 6.5 A IF = 6.5 A; Tj = 125C VR = VRWM VR = VRWM Tj = 100 C TYP. 1.1 1.05 10 50 MAX. 1.45 1.3 250 500 MODULATOR TYP. 1.15 1.1 10 100 MAX. 1.55 1.45 100 600 UNIT V V A A
DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated DAMPER SYMBOL trr Qs Vfr PARAMETER Reverse recovery time Reverse recovery charge Peak forward recovery voltage CONDITIONS IF = 1 A; VR 30 V; -dIF/dt = 50 A/s 2 A,30 V,20 A/s IF = 6.5 A; dIF/dt = 50 A/s TYP. 200 1.2 27 MAX. 300 2.0 MODULATOR TYP. 125 0.5 18.0 MAX. 145 0.7 UNIT ns C V
December 1999
2
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
BYM359X
I
dI F dt
F
15
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
BY329
Ths(max) / C a = 1.57 1.9 2.2
78
trr time
10 4 5
102
2.8
126
Qs I I
25%
100%
R
rrm
0 0 2 4 IF(AV) / A 6
150 8
Fig.1. Definition of trr, Qs and Irrm
Fig.4. Modulator maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV).
I
F
80 70
IFS(RMS) / A
BY229
IFSM 60 50
time VF V VF time fr
40 30 20 10 0 1ms 10ms 0.1s tp / s 1s 10s
Fig.2. Definition of Vfr
Fig.5. Modulator maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM.
20
PF / W
Vo = 1.25 V Rs = 0.03 Ohms
BY329
Ths(max) / C 54 D = 1.0 78
30
IF / A Tj = 150 C Tj = 25 C
BY229F
15
0.5 0.2 0.1
I tp D= tp T t
20
10
102
10
5
T
126
typ
max
0 0 2 4 6 IF(AV) / A 8 10
150 12
0 0 0.5 1 VF / V
1.5
2
Fig.3. Modulator maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T.
Fig.6. Modulator typical and maximum forward characteristic; IF = f(VF); parameter Tj
December 1999
3
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
BYM359X
10
Qs / uC Tj = 150 C Tj = 25 C
BY329
100
Cd / pF
BY329
IF = 10 A 10 A 2A 1 1A 2A 1A
10
0.1 1
10 -dIF/dt (A/us)
100
1 1
10
VR / V 100
1000
Fig.7. Modulator maximum Qs at Tj = 25C and 150C
Fig.9. Modulator typical junction capacitance Cd at f = 1 MHz; Tj = 25C
10
Transient thermal impedance, Zth j-hs (K/W)
1000
trr / ns
BY329 IF = 10 A 10A 1A 1A
0.1
1
100
0.01
P D tp D= tp T t
Tj = 150 C Tj = 25 C 10 1 10 -dIF/dt (A/us) 100
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229F
10s
Fig.8. Modulator maximum trr measured to 25% of Irrm; Tj = 25C and 150C
Fig.10. Modulator transient thermal impedance Zth = f(tp)
December 1999
4
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
BYM359X
80 70
IFS(RMS) / A
BY359
IF / A 30 Tj=150C
BY359
IFSM 60 50 40 30
10 20
Tj=25C
typ
20 10 0 1ms 10ms 0.1s tp / s 1s 10s
0 0 1.0 VF / V 2.0 max
Fig.11. Damper maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM.
Transient thermal impedance, Zth j-hs (K/W)
Fig.13. Damper forward characteristic IF = f(VF); parameter Tj
10
1
0.1
0.01
P D
tp
D=
tp T t
0.001 1us
T
10us
100us 1ms 10ms 100ms 1s pulse width, tp (s) BY359F
10s
Fig.12. Damper transient thermal impedance Zth = f(tp)
December 1999
5
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10.3 max 3.2 3.0
BYM359X
4.6 max 2.9 max
Recesses (2x) 2.5 0.8 max. depth
2.8 6.4 seating plane 15.8 max
15.8 max. 3 max. not tinned
19 max.
3 2.5 13.5 min. 1 0.4
M
2
3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7
5.08
Fig.14. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8".
December 1999
6
Rev 1.200
Philips Semiconductors
Product specification
Dual diode fast, high-voltage
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYM359X
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
December 1999
7
Rev 1.200

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